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Mschichmanhodgesmosfet

PURPOSE ^

%

SYNOPSIS ^

function [a,b,c]= Mschichmanhodgesmosfet (string,parameters,parameternames,extvar,intvar,t)

DESCRIPTION ^

% -*- texinfo -*-
%
% @deftypefn{Function File} @
% {[@var{a},@var{b},@var{c}]=} Mschichmanhodgesmosfet@
% (@var{string}, @var{parameters}, @var{parameternames}, @
% @var{extvar},@var{intvar},@var{t})
%
% SBN file implementing Schichman-Hodges MOSFETs model.
%
% @var{string} is used to select among models. Possible models are:
%
% @enumerate
% @item @var{string} = 'NMOS' (Schichman-Hodges n-MOSFET)
% @item @var{string} = 'PMOS' (Schichman-Hodges p-MOSFET)
% @item @var{string} = 'NMOStpar' (n-MOSFET with temperature treated as a parameter)
% @item @var{string} = 'PMOStpar' (p-MOSFET with temperature treated as a parameter)
% @item @var{string} = 'NMOSnoP'  (n-MOSFET without heat-flux)
% @item @var{string} = 'PMOSnoP'  (p-MOSFET without heat-flux)
% @end enumerate
%
% Parameters for all the above models are:
% @itemize
% @item rd     -> parasitic resistance between drain and source
% @item W      -> MOSFET width
% @item L      -> channel length
% @item mu0    -> reference value for mobility
% @item Vth    -> threshold voltage
% @item Cox    -> oxide capacitance
% @item Cgs    -> gate-source capacitance
% @item Cgd    -> gate-drain capacitance
% @item Cgb    -> gate-bulk capacitance
% @item Csb    -> source-bulk capacitance
% @item Cdb    -> drain-bulk capacitance
% @item Tshift -> shift for reference temperature on MOSFETs (default 0)
% @end itemize
%
% @seealso{ PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
% format  specifications }
% @end deftypefn

CROSS-REFERENCE INFORMATION ^

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